Selective excitation and thermal quenching of the yellow luminescence of GaN
نویسندگان
چکیده
We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors. © 1999 American Institute of Physics. @S0003-6951~99!04347-8#
منابع مشابه
Selective excitation of the yellow luminescence of GaN
The yellow luminescence of n-type GaN has been studied with selective excitation using a combination of Ar`-ion and dye lasers. Narrower structures whose peak energies follow the excitation photon energy over the width of the yellow luminescence have been observed. Unlike the yellow luminescence excited by the above band gap excitations, these "ne structures exhibit thermal activated quenching ...
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